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SFF2001GD PDF Datasheet浏览和下载

钱柜娱乐官网.:
SFF2001GD
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内容描述:
[20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers]
文件大小:
804 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览钱柜娱乐官网SFF2001GD的Datasheet PDF文件第2页 
SFF2001GD thru SFF2008GD
Pb Free Plating Product
SFF2001GD thru SFF2008GD
Pb
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
Application
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.90 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Features
Super fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB/TO-220F-3L
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Tandem Polarity
Suffix "GD"
Series
Tandem Polarity
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
SYMBOL 2001
GD
SFF
2002
GD
SFF
2003
GD
SFF
2004
GD
SFF
2005
GD
SFF
2006
GD
SFF
2007
GD
SFF
2008 UNIT
GD
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@ 10 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
(Note 1)
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
50
35
50
100
70
100
150
105
150
200
140
200
20
150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
0.975
10
400
35
90
2.5
- 55 to +150
- 55 to +150
1.3
1.7
V
μA
ns
pF
°C/W
°C
°C
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
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